Colloquium/Seminar

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Event(s) on March 2005


  • Tuesday, 8th March, 2005

    Title: Triangulations and Their Applications in Simplicial Methods for Optimization
    Speaker: Dr. Chuangyin Dang, Department of Manufacturing Engineering & Engineering Management, City University of Hong Kong, Hong Kong
    Time/Place: 11:30  -  12:30
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    Abstract: Triangulations or simplicial subdivisions appeared originally in the category of topology. Now they play a basic role in simplicial methods for optimization. In this talk, a brief introduction to triangulations of the Euclidean space will be presented, and their applications in simplicial methods for optimization will be discussed.


  • Friday, 11th March, 2005

    Title: Numerical Solution of the 2D Nonlinear Poisson-Boltzmann Equations
    Speaker: Mr. Zhonghua Qiao, Department of Mathematics, Hong Kong Baptist University, Hong Kong
    Time/Place: 14:30  -  15:30
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    Abstract: Nonlinear Poisson-Boltzmann equation is used to model the electrostatic interaction between two parallel charged rods and the electrostatic interaction between two like-charged spherical particles. For two parallel charged rods, the fast immersed interface method for Helmholtz equations on exterior irregular domains is used to solve the linearized equation. The monotone iterative method is used for solving the non-linear iteration. For two like-charged spherical particles, a modified central difference scheme is used to solve the linearized equation. Moreover, the Newton iterative method is used for solving the non-linear iteration. We also compare our results with available data in the literatures to validate the numerical methods.


  • Tuesday, 22nd March, 2005

    Title: A New Integral Equation Method for Nonequilibrium Green's Function Methods in Electron Transport in Nanotransistors
    Speaker: Prof. Cai Wei, Department of Mathematics, University of North Carolina at Charlotte & Hong Kong Baptist University, USA
    Time/Place: 11:30  -  12:30
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    Abstract: In this talk, we will present a prelimary result on an integral equation method for modeling electron transport in nano MOSFET transistors based on nonequilibrium Green's function methods. The transport property in MOSFET with nanoscale channel width (25 nm range) requires quantum modeling of the ballistic transport in the channel. The general framework for quantum transport is based on Keldysh nonequilibrium nonequilibrium Green's functions which can handle the effects of device geometry and dissipative interactions through self-energies. In this talk, we will be mainly concerned with the issue of how to contruct self energy from geometric effect of the MOSFET and the effect on the current flows.

 

 


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